College of Electrical Engineering and Computer Science, NCKU

InGaN–GaN Multiquantum-Well Blue and Green Light-Emitting Diodes

THE III–V NITRIDE semiconductor materials have a wurtzite crystal structure and a direct energy bandgap. At room temperature, the bandgap energy of AlInGaN varies from 1.95 to 6.2 eV depends on its composition ratio. Therefore, III–V nitride semiconductors are useful for light-emitting device in the short wavelength region. Indeed, III–V nitride-based blue and green light-emitting diodes (LEDs) are now commercially available. Currently, these blue and green LEDs have already been extensively used in traffic light source and full color display..........[FULL STORY]

2011 Orange Technology Exhibition in Taiwan Held at NCKU 

National Cheng Kung University (NCKU), Tainan, Taiwan, has organized the 2011 Orange Technology Exhibition on November 25th in Department of Electrical Engineering, Tzu-Chiang Campus, hoping to promote the conception of Gross National Happiness....................